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4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device

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Shenzhen A.N.G Technology Co., Ltd

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4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device

Brand Name : ANG

Model Number : SIC-W05

Certification : ISO

Place of Origin : Guangdong, China

MOQ : 100

Price : Depends on size and quantity

Payment Terms : T/T, Western Union,Paypal

Supply Ability : 500,000pcs per month

Delivery Time : 8~10 working days

Packaging Details : Singer Wafer in 100 Grade Cleaning Room

Color : Green

Mpd : <2cm-2

Size : <2cm-2

Transport Package : Singer Wafer in 100 Grade Cleaning Room

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4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device

Regarding Silicon Carbide(SiC) Crystal

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.

SiC Application

1. high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN,diodes, IGBT, MOSFET
2. optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED

Specification

Grade	Zero MPD Grade	Production Grade	Research Grade	Dummy Grade
Diameter	50.6mm±0.2mm
Thickness	1000±25um Or other customized thickness
Wafer Orientation	Off axis : 4.0° toward <1120> ±0.5° for 4H-N/4H-SI On axis : <0001>±0.5° for 6H-N/6H-SI/4H-N/4H-SI
Micropipe Density	≤0 cm-2	≤2 cm-2	≤5 cm-2	≤30 cm-2
Resistivity 4H-N	0.015~0.028 Ω•cm
Resistivity 4/6H-SI	≥1E7 Ω·cm
Primary Flat	{10-10}±5.0° or round shape
Primary Flat Length	18.5 mm±2.0 mm or round shape
Secondary Flat Length	10.0mm±2.0 mm
Secondary Flat Orientation	Silicon face up: 90° CW. from Prime flat ±5.0°
Edge exclusion	1 mm
TTV/Bow /Warp	≤10μm /≤10μm /≤15μm
Roughness	Polish Ra≤1 nm / CMP Ra≤0.5 nm
Cracks by high intensity light	None		1 allowed, ≤2 mm	Cumulative length ≤ 10mm, single length≤2mm
Hex Plates by high intensity light	Cumulative area ≤1%		Cumulative area ≤1%	Cumulative area ≤3%
Polytype Areas by high intensity light	None		Cumulative area ≤2%	Cumulative area ≤5%
Scratches by high intensity light	3 scratches to 1×wafer diameter cumulative length		5 scratches to 1×wafer diameter cumulative length	5 scratches to 1×wafer diameter cumulative length
edge chip	None		3 allowed, ≤0.5 mm each	5 allowed, ≤1 mm each

Common Size In Stock

4H-N Type / High Purity SiC wafer/ingots 2 inch 4H N-Type SiC wafer/ingots 3 inch 4H N-Type SiC wafer 4 inch 4H N-Type SiC wafer/ingots 6 inch 4H N-Type SiC wafer/ingots	4H Semi-insulating / High Purity SiC wafer 2 inch 4H Semi-insulating SiC wafer 3 inch 4H Semi-insulating SiC wafer 4 inch 4H Semi-insulating SiC wafer 6 inch 4H Semi-insulating SiC wafer
6H N-Type SiC wafer 2 inch 6H N-Type SiC wafer/ingot	Customzied size for 2-6inch

Product Picture

4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device

PACKAGE

4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device

4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device Images

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